1. Crystallography and Material Principles of Silicon Carbide
1.1 Polymorphism and Atomic Bonding in SiC
(Silicon Carbide Ceramic Plates)
Silicon carbide (SiC) is a covalent ceramic compound composed of silicon and carbon atoms in a 1:1 stoichiometric ratio, differentiated by its exceptional polymorphism– over 250 well-known polytypes– all sharing strong directional covalent bonds however varying in stacking series of Si-C bilayers.
The most technologically pertinent polytypes are 3C-SiC (cubic zinc blende structure), and the hexagonal types 4H-SiC and 6H-SiC, each displaying subtle variations in bandgap, electron movement, and thermal conductivity that influence their viability for details applications.
The toughness of the Si– C bond, with a bond energy of approximately 318 kJ/mol, underpins SiC’s amazing firmness (Mohs solidity of 9– 9.5), high melting factor (~ 2700 ° C), and resistance to chemical degradation and thermal shock.
In ceramic plates, the polytype is generally selected based on the meant use: 6H-SiC is common in architectural applications due to its ease of synthesis, while 4H-SiC dominates in high-power electronic devices for its exceptional cost carrier mobility.
The large bandgap (2.9– 3.3 eV depending on polytype) additionally makes SiC an exceptional electrical insulator in its pure kind, though it can be doped to work as a semiconductor in specialized electronic tools.
1.2 Microstructure and Stage Pureness in Ceramic Plates
The performance of silicon carbide ceramic plates is critically based on microstructural functions such as grain size, thickness, phase homogeneity, and the existence of additional phases or impurities.
Top quality plates are generally produced from submicron or nanoscale SiC powders with sophisticated sintering techniques, leading to fine-grained, completely dense microstructures that make best use of mechanical strength and thermal conductivity.
Contaminations such as cost-free carbon, silica (SiO TWO), or sintering help like boron or light weight aluminum have to be meticulously controlled, as they can develop intergranular movies that reduce high-temperature toughness and oxidation resistance.
Residual porosity, also at reduced degrees (
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